| PART |
Description |
Maker |
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging
x8/x16 Flash EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
|
PLX Technology, Inc.
|
| NTD5406NT4G NTD5406N |
Power MOSFET, 40 V, 70 A, Single N-Channel
Power MOSFET 40 V, 70 A, Single N-Channel, DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12.2 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| NTD4863N-35G NTD4863N--1G NTD4863N--35G NTD4863NAT |
Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK
Power MOSFET 25V, 46A, Single N-Channel 9.2 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTD95N02R NTD95N02R-001 NTD95N02R-001G NTD95N02RG |
Power MOSFET 24V, 95 A, N-Channel Single DPAK
Power MOSFET 24V, 95 A, N-Channel Single DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 32 A, 24 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 24V, 95 A, N-Channel Single DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Rail; Qty per Container: 75 32 A, 24 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 95 Amps, 24 Volts N−Channel DPAK
|
ON Semiconductor
|
| IRFZ34NL IRFZ34NS IRFZ34NSTRL IRFZ34NSTRR |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| AM29F017B-90E4I AM29F017B-75FC AM29F017B-75EI AM29 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRFIZ24N with Standard Packaging
250V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR12N25D with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ44NS with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7832 with Lead Free Packaging
x8 Flash EEPROM x8闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3709ZS with Lead Free Packaging
|
YEONHO Electronics Co., Ltd.
|
| OM6011SM OM6009SM OM6010SM OM6012SM |
500V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package 500V单N沟道高可靠性的28 MOSFET的引脚LCC封装
200V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
400V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
Fairchild Semiconductor, Corp.
International Rectifier
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
